Hittite Press Release - February 4, 2010

Hittite's 1W Power Amplifier Modules for Telecom, Test & Military Applications

Excellent Gain Flatness from 0.01 – 6 GHz!


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Hittite's HMC-C074 andHMC-C075Chelmsford, MA, 2/04/10 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced two new connectorized Power Amplifiers which provide high linearity, high output power and excellent gain flatness, making them ideal for telecom infrastructure, military & space and test instrumentation applications from 10 MHz to 6 GHz.

The HMC-C074 and the HMC-C075 are low and high gain Power Amplifier modules which are specified for operation between 10 MHz and 6 GHz, and exhibit 13 dB and 24 dB of gain while consuming only 450 mA and 740 mA respectively from a +15V supply. The HMC-C074 and the HMC-C075 provide +40 dBm and +42 dBm output IP3 and +29 dBm and 29.5 dBm of output power at 1 dB gain compression respectively.

HMC-C075Excellent Gain flatness of ±0.75 dB from 10 MHz - 6 GHz makes these amplifier modules ideal candidates for EW, ECM, radar and test equipment applications. The amplifier I/Os are internally matched to 50 Ohms and are DC blocked. Integrated voltage regulators allow for flexible biasing of both the negative and positive supply pins, while internal bias sequencing circuitry allows robust operation.

The HMC-C074 and HMC-C075 amplifiers complement Hittite's expanding line of amplifier products which are available in die, SMT and connectorized module formats, with frequency coverage up to 86 GHz.

All connectorized module products are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.



Hittite Microwave Corporation is an innovative designer and manufacturer of analog and mixed-signal ICs, modules, subsystems and instrumentation for RF, microwave and millimeterwave applications covering DC to 110 GHz. Our RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.



Contact
Beth McGreevy
MarCom Manager
mcgreevy@hittite.com
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
sales@hittite.com www.hittite.com






Posted 2/18/2010