History In 1991,
William J. Pratt, Powell T. Seymour and Jerry D. Neal founded RF Micro Devices (RFMD)
in Greensboro, North Carolina. Since our inception, we have grown from a small design
shop into a global leader in wireless technology and proven world-class component
supplier.
Multiple Process Technologies
We lead the market in manufacturing gallium arsenide heterojunction bipolar transistor
(GaAs HBT) semiconductors. We also specialize in silicon germanium, silicon CMOS,
silicon BiCMOS, GaAs MESFET, InGaP HBT, InGaAs pHEMT and GaN HEMT process technologies.
Optimum Technology Matching® (OTM)
Through OTM, our engineers match the appropriate process technology and device
technology to each product according to the best possible combination of price and
performance.
Customers
We take pride in our customer relationships and are aligned with many of the
leaders in the industry such as Nokia, Siemens, Sony-Ericsson, Motorola, Samsung,
Wavecom, Hyundai and Sendo, and we continue to expand our customer base.
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Products We
offer a broad range of standard- and custom-designed products for cellular, wireless
LAN, Bluetoothâ„¢ wireless technology, GPS and satellite radio. We are the world's
leading provider of power amplifiers (PAs) for wireless handsets. In addition to
PAs, our extensive product portfolio includes complete chip set solutions, receivers,
transceivers, gain blocks, driver amplifiers and small signal devices, such as low
noise amplifiers, mixers and more. These components are used in a variety of applications,
such as cell phones, base stations, cable television modems and personal communication
systems.
Capacity and Global Expansion
Over the past decade, RFMD has grown from a single office with a handful of employees
into a 1.2 million square foot campus with offices located worldwide employing over
1600 people. RF Micro Devices is committed to capacity. We own and operate a molecular
beam epitaxy (MBE) facility, two high-volume GaAs HBT fabrication facilities and
an advanced technology foundry and fab dedicated to the development of gallium nitride
materials and devices. We perform 100 percent RF testing in our two test and tape
and reel facilities located in Greensboro, North Carolina and Beijing, China. We
operate eight design centers and have established nine sales and support offices
located worldwide.
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