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Featured Company - May 2003
This month's featured company is RF Micro Devices, of Greensboro, NC, U.S.A. Please tell the RF Micro Devices folks you saw them featured on the RF Cafe web site!

In 1991, William J. Pratt, Powell T. Seymour and Jerry D. Neal founded RF Micro Devices (RFMD) in Greensboro, North Carolina. Since our inception, we have grown from a small design shop into a global leader in wireless technology and proven world-class component supplier.

Multiple Process Technologies

We lead the market in manufacturing gallium arsenide heterojunction bipolar transistor (GaAs HBT) semiconductors. We also specialize in silicon germanium, silicon CMOS, silicon BiCMOS, GaAs MESFET, InGaP HBT, InGaAs pHEMT and GaN HEMT process technologies.

Optimum Technology Matching® (OTM)

Through OTM, our engineers match the appropriate process technology and device technology to each product according to the best possible combination of price and performance.


We take pride in our customer relationships and are aligned with many of the leaders in the industry such as Nokia, Siemens, Sony-Ericsson, Motorola, Samsung, Wavecom, Hyundai and Sendo, and we continue to expand our customer base.

Please click here to visit the RF Micro Devices website.Products

We offer a broad range of standard- and custom-designed products for cellular, wireless LAN, Bluetooth™ wireless technology, GPS and satellite radio. We are the world's leading provider of power amplifiers (PAs) for wireless handsets. In addition to PAs, our extensive product portfolio includes complete chip set solutions, receivers, transceivers, gain blocks, driver amplifiers and small signal devices, such as low noise amplifiers, mixers and more. These components are used in a variety of applications, such as cell phones, base stations, cable television modems and personal communication systems.

Capacity and Global Expansion

Over the past decade, RFMD has grown from a single office with a handful of employees into a 1.2 million square foot campus with offices located worldwide employing over 1600 people. RF Micro Devices is committed to capacity. We own and operate a molecular beam epitaxy (MBE) facility, two high-volume GaAs HBT fabrication facilities and an advanced technology foundry and fab dedicated to the development of gallium nitride materials and devices. We perform 100 percent RF testing in our two test and tape and reel facilities located in Greensboro, North Carolina and Beijing, China. We operate eight design centers and have established nine sales and support offices located worldwide.

RF Micro Devices
7628 Thorndike Road
Greensboro, NC  27409
Phone: 1.336.678.5570
Text excerpted from the RF Micro Devices website

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